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| LAPT 2SA1216 Application : Audio and General Purpose (Ta=25C) 2SA1216 -100max -100max -180min 30min -2.0max 40typ 500typ V MHz pF 20.0min 4.0max Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1216 -180 -180 -5 -17 -5 200(Tc=25C) 150 -55 to +150 Unit V V V A A W C C sElectrical Characteristics SymboI VCBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=-180V VEB=-5V IC=-25mA VCE=-4V, IC=-8A IC=-8A, IB=-0.8A VCE=-12V, IE=2A VCB=-10V, f=1MHz External Dimensions MT-200 36.40.3 24.40.2 2-o3.20.1 9 7 21.40.3 2.1 6.00.2 Unit A A V a b 2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) -40 RL () 4 IC (A) -10 VB2 (V) 5 IB1 (A) -1 IB2 (A) 1 ton (s) 0.3typ tstg (s) 0.7typ tf (s) 0.2typ Weight : Approx 18.4g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) -1. m 00 A V CE ( sa t ) - IB Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V ) -3 I C - VBE Temperature Characteristics (Typical) -17 -15 Collector Current I C (A) (VCE=-4V) 5A -1 A 00 m A -17 -15 -5 -7 0 -40 mA -3 00 m A Collector Current I C( A) -2 00 mA -10 -2 eT em p) Tem p) -150mA -10 -100mA -5 C( 125 -50mA C(C 25 IC=-10A -5A 0 0 IB=-20mA 0 0 -1 -2 -3 -4 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 -30 -1 C( Cas -5 ase -1 eT emp Cas ) -2 -2.4 Collector-Emitter Voltage V C E( V) Base Current I B( A) Base-Emittor Voltage V B E( V) hFE - IC Characteristics (Typical) (V C E= -4V) 300 DC Curr ent Gain h F E hFE - I C Temperature Characteristics (Typical) (V C E= -4V) 200 DC Cur rent Gain h F E 125C 100 25C 50 -30C j-a - t Characteristics j - a( C/W) Transient Thermal Resistance 2 1 100 Typ 0.5 50 10 -0.02 -0.1 -0.5 -1 -5 -10 -17 10 -0.02 -0.1 -0.5 -1 Collector Current I C( A) -5 -10 -17 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C( A) f T - IE Characteristics (Typical) (V C E= -12V) 60 -50 Safe Operating Area (Single Pulse) 200 P c - T a Derating M aximum Power Dissipa ti on P C( W) 10 m 160 Cu t-off Fre quen cy f T( MH Z) s W 40 T yp Collect or Cur ren t I C( A) -10 -5 DC ith In fin 120 ite he at si nk 80 20 -1 -0.5 Without Heatsink Natural Cooling 40 Without Heatsink 0 25 50 75 100 125 150 0 0.02 0.1 1 10 -0.2 -2 -10 -100 -300 5 0 Emitter Current I E( A) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 13 This datasheet has been downloaded from: www..com Datasheets for electronic components. |
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